 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Silicon Dual Schottky Diode DBS mixer application to 12 GHz q Low noise figure q Medium barrier type q BAT 14-099 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-099 Marking Ordering Code (tape and reel) S9 Q62702-A3461 Pin Configuration Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward current Power dissipation, TS 55 C Storage temperature range Operating temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VR IF Ptot Tstg Top Values 4 90 100 - 55 ... + 150 Unit V mA mW - 55 ... + 150 C 1090 930 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm to 0.7 mm. Semiconductor Group 1 02.96 BAT 14-099 Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Breakdown voltage IR = 5 A Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Diode capacitance VR = 0, f= 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VBR VF - - VF Values typ. - max. - 4 Unit V 0.43 0.55 - - 5.5 - - 10 0.35 - mV pF - - - CT RF Semiconductor Group 2 BAT 14-099 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 14-099 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = ) f GHz 1 2 3 4 5 6 7 8 9 10 11 12 I = 0.02 mA MAG ANG 0.99 0.96 0.95 0.93 0.93 0.91 0.89 0.88 0.86 0.83 0.82 0.80 - 15.89 - 30.40 - 45.30 - 59.60 - 74.80 - 89.50 - 106.60 - 123.40 - 143.20 - 166.10 168.10 138.20 I = 0.05 mA MAG ANG 0.91 0.88 0.87 0.86 0.85 0.83 0.80 0.79 0.76 0.72 0.71 0.72 - 16.40 - 30.80 - 46.20 - 61.60 - 77.10 - 93.10 - 110.50 - 129.40 - 150.20 - 174.10 158.10 127.20 I = 0.1 mA MAG ANG 0.79 0.76 0.75 0.73 0.72 0.69 0.66 0.64 0.62 0.58 0.59 0.60 - 16.40 - 31.09 - 47.30 - 62.40 - 78.70 - 95.70 - 112.70 - 132.40 - 154.20 - 179.10 153.80 121.20 I = 0.2 mA MAG ANG 0.57 0.56 0.55 0.53 0.51 0.48 0.45 0.43 0.40 0.37 0.39 0.44 - 16.60 - 30.70 - 47.00 - 62.40 - 78.70 - 95.70 - 114.00 - 135.40 - 161.20 171.10 140.80 108.20 I = 0.5 mA MAG ANG 0.13 0.13 0.11 0.10 0.07 0.04 0.02 0.06 0.12 0.19 0.25 0.33 - 17.30 - 28.40 - 43.99 - 54.40 - 80.70 - 102.30 158.01 118.40 96.20 72.10 62.60 49.20 S11 = f (f, I) Semiconductor Group 4 |
Price & Availability of BAT14-099
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |